News Article
Sumitomo`s 500W GaN PAs offer superior packaging & performance
The gallium nitride devices are claimed to be about half the size of similar power amplifiers
Sumitomo Electric Device Innovations USA, Inc. (SEDU) is introducing new 500W single-ended GaN power amplifiers (PAs) for S-band radar at IMS 2013 in Seattle.
The devices are the first in their class housed in a space-saving IV package - at 17.4mm x 24mm x 5 mm about half the size of current PAs - while offering high efficiency and gain to Radar manufacturers.
"The new PAs are a natural extension of our expertise in GaN technology and reduced footprint, resulting in devices that combine high-power performance into the smallest packages," says John Wyatt, President of Sumitomo Electric Device Innovations USA. "This expertise enables radar designers to evolve designs into smaller form factors while enhancing performance."
Key Features/Benefits
The PAs are internally matched to provide optimum power and gain for 50 Ω systems and have a high operating voltage of 50V. The GaN devices have a high gain, with a minimum target of 12 dB and an efficiency with 60 percent being the typical target. For broadband operation, two devices cover the entire S-band. The modules also have low thermal resistance, for superior heat dissipation and come in a compact IV package to save footprint.
As the names suggest, the 2731-500W operates at a frequency of 2.7-3.1 GHz while the 3135-500W operates in the 3.1-3.5 GHz band. Both devices have a minimum output power of 500 W, a typical pulse width of 150µs, and a typical duty of 10 percent.
Sumitomo's GaN PAs for radar applications span from L-Band to X-Band with power levels up to 600W.
The firm will be showcasing its products at booth #2120 at the International Microwave Symposium 2013 (IMS) in Seattle, taking place from June 4th to June 7th, 2013.
The devices are the first in their class housed in a space-saving IV package - at 17.4mm x 24mm x 5 mm about half the size of current PAs - while offering high efficiency and gain to Radar manufacturers.
"The new PAs are a natural extension of our expertise in GaN technology and reduced footprint, resulting in devices that combine high-power performance into the smallest packages," says John Wyatt, President of Sumitomo Electric Device Innovations USA. "This expertise enables radar designers to evolve designs into smaller form factors while enhancing performance."
Key Features/Benefits
The PAs are internally matched to provide optimum power and gain for 50 Ω systems and have a high operating voltage of 50V. The GaN devices have a high gain, with a minimum target of 12 dB and an efficiency with 60 percent being the typical target. For broadband operation, two devices cover the entire S-band. The modules also have low thermal resistance, for superior heat dissipation and come in a compact IV package to save footprint.
As the names suggest, the 2731-500W operates at a frequency of 2.7-3.1 GHz while the 3135-500W operates in the 3.1-3.5 GHz band. Both devices have a minimum output power of 500 W, a typical pulse width of 150µs, and a typical duty of 10 percent.
Sumitomo's GaN PAs for radar applications span from L-Band to X-Band with power levels up to 600W.
The firm will be showcasing its products at booth #2120 at the International Microwave Symposium 2013 (IMS) in Seattle, taking place from June 4th to June 7th, 2013.
